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Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994. [47] NEC's 1 Gb DRAM memory chip in 1995. [47] Hitachi's 128 Mb NAND flash memory chip in 1996. [47] DEC Alpha 21264A, which was made commercially available in 1999. AMD K6-2 Chomper and ...
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The structure providing the capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell. They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell.
The dram (alternative British spelling drachm; apothecary symbol ʒ or ℨ; [a] abbreviated dr) [4] [5]: C-6–C-7 [6] is a unit of mass in the avoirdupois system, and both a unit of mass and a unit of volume in the apothecaries' system. [5]
2011: In January, Samsung announced the completion and release for testing of a 2 GB [1] DDR4 DRAM module based on a process between 30 and 39 nm. [28] It has a maximum data transfer rate of 2133 MT/s at 1.2 V, uses pseudo open drain technology (adapted from graphics DDR memory [29]) and draws 40% less power than an equivalent DDR3 module. [28 ...
The 6513, 6514 and 6515 are similarly equivalent to (respectively) a 6503, 6504 and 6505 with the same 2-phase clock input. [86] The 6512 was used in the BBC Micro B+64. Ricoh RP2A03 RP2A07 Unlicensed 6502 variants running at ~1.8 MHz [c] including an audio processing unit but lacking the BCD mode, used in the Nintendo Entertainment System. MOS ...
Dimensionless numbers (or characteristic numbers) have an important role in analyzing the behavior of fluids and their flow as well as in other transport phenomena. [1] They include the Reynolds and the Mach numbers, which describe as ratios the relative magnitude of fluid and physical system characteristics, such as density, viscosity, speed of sound, and flow speed.
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