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  2. Semikron - Wikipedia

    en.wikipedia.org/wiki/Semikron

    Semikron's product range consists of 11,600 different power semiconductors from 1 kW to 10 MW, including chips, discrete diodes/thyristors, power modules (IGBT/MOSFET/diode / thyristor/CIB/IPM), driver and protection components and integrated subsystems. Amongst other developments, Semikron invented the world's first isolated power module.

  3. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    Working principle‍. Semiconductor. Invented. 1959. Electronic symbol. IGBT schematic symbol. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [ 1 ][ 2 ...

  4. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.

  5. Power module - Wikipedia

    en.wikipedia.org/wiki/Power_module

    A power module or power electronic module provides the physical containment for several power components, usually power semiconductor devices. These power semiconductors (so-called dies) are typically soldered or sintered on a power electronic substrate that carries the power semiconductors, provides electrical and thermal contact and ...

  6. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    Power semiconductor device. Appearance. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in ...

  7. Silicon controlled rectifier - Wikipedia

    en.wikipedia.org/wiki/Silicon_controlled_rectifier

    A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...

  8. Thyratron - Wikipedia

    en.wikipedia.org/wiki/Thyratron

    Reference 2D21 tube is 2 ⅛ inches tall (54 mm). A thyratron is a type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum tubes. Electron multiplication occurs when the gas becomes ionized, producing a phenomenon known as a Townsend discharge.

  9. Integrated gate-commutated thyristor - Wikipedia

    en.wikipedia.org/wiki/Integrated_gate-commutated...

    Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...

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