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Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
Adhesive bonding with organic materials such as BCB or SU-8 has simple process properties and the ability to form high-aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer. [3]
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...
wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the bonding process is also referred to as silicon direct bonding or silicon fusion bonding.
Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all suitable bonding techniques that enable the contacting of two or more wafers.
For example, the Apple iPhone 5 has at least eleven different WLPs, the Samsung Galaxy S3 has six WLPs and the HTC One X has seven. Functions provided WLPs in smartphones include sensors, power management, and wireless. [1] The iPhone 7 was rumored to use fan-out wafer-level packaging technology in order to achieve a thinner and lighter model.
2. Typically, thermocompression bonds are made with delivering heat and pressure to the mating surface by a hard faced bonding tool. Compliant bonding [11] is a unique method of forming this type of solid state bond between a gold lead and a gold surface since heat and pressure is transmitted through a compliant or deformable media. The use of ...
These techniques are usually used when the die will be wire bonded; dies with flip chip technology do not use these attachment techniques. [15] [16] IC bonding is also known as die bonding, die attach, and die mount. [17] The following operations are performed at the packaging stage, as broken down into bonding, encapsulation, and wafer bonding ...