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Avalanche diodes (commonly encountered as high voltage Zener diodes) are constructed to break down at a uniform voltage and to avoid current crowding during breakdown. These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage.
The Zener effect is distinct from avalanche breakdown. Avalanche breakdown involves minority carrier electrons in the transition region being accelerated, by the electric field, to energies sufficient for freeing electron-hole pairs via collisions with bound electrons. The Zener and the avalanche effect may occur simultaneously or independently ...
A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...
Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current [clarification needed] when compared to a non-avalanche diode. [1] The Zener diode exhibits an apparently similar effect in addition to Zener breakdown. Both effects are present in any such diode, but one usually ...
The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the mean free path of the electrons, resulting in many collisions between them on the way through the channel.
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Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.
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