Search results
Results from the WOW.Com Content Network
The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.
A thyristor-switched capacitor (TSC) is a type of equipment used for compensating reactive power in electrical power systems. It consists of a power capacitor connected in series with a bidirectional thyristor valve and, usually, a current limiting reactor (inductor). The thyristor switched capacitor is an important component of a Static VAR ...
Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...
A thyristor controlled reactor is usually a three-phase assembly, normally connected in a delta arrangement to provide partial cancellation of harmonics. Often the main TCR reactor is split into two halves, with the thyristor valve connected between the two halves. This protects the vulnerable thyristor valve from damage due to flashovers ...
anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
Thyristor: The thyristor is a family of three-terminal devices that include SCRs, GTOs, and MCT. For most of the devices, a gate pulse turns the device on. The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking ...
1959. Electronic symbol. IGBT schematic symbol. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [1][2][3][4][5] that are controlled by a metal–oxide ...
Static synchronous compensator. In Electrical Engineering , a static synchronous compensator (STATCOM) is a shunt-connected, reactive compensation device used on transmission networks. It uses power electronics to form a voltage-source converter that can act as either a source or sink of reactive AC power to an electricity network.