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  2. Avalanche breakdown - Wikipedia

    en.wikipedia.org/wiki/Avalanche_breakdown

    Avalanche diodes (commonly encountered as high voltage Zener diodes) are constructed to break down at a uniform voltage and to avoid current crowding during breakdown. These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage.

  3. Zener effect - Wikipedia

    en.wikipedia.org/wiki/Zener_effect

    In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...

  4. Avalanche diode - Wikipedia

    en.wikipedia.org/wiki/Avalanche_diode

    In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.

  5. Zener diode - Wikipedia

    en.wikipedia.org/wiki/Zener_diode

    A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...

  6. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    The strength of the depletion zone electric field increases as the reverse-bias voltage increases. Once the electric field intensity increases beyond a critical level, the p–n junction depletion zone breaks down and current begins to flow, usually by either the Zener or the avalanche breakdown processes. Both of these breakdown processes are ...

  7. IMPATT diode - Wikipedia

    en.wikipedia.org/wiki/IMPATT_diode

    This phenomenon is called avalanche breakdown. At breakdown, the n– region is punched through and forms the avalanche region of the diode. The high resistivity region is the drift zone through which the avalanche generated electrons move toward the anode. Consider a dc bias V B, just short of that required to cause breakdown, applied to the ...

  8. Silicon controlled rectifier - Wikipedia

    en.wikipedia.org/wiki/Silicon_controlled_rectifier

    The device behaves as two diodes connected in series. A small leakage current flows. This is the reverse blocking mode. If the reverse voltage is increased, then at critical breakdown level, called the reverse breakdown voltage (V BR), an avalanche occurs at J1 and J3 and the reverse current increases rapidly. SCRs are available with reverse ...

  9. Noise generator - Wikipedia

    en.wikipedia.org/wiki/Noise_generator

    In an avalanche, one carrier collides with other atoms and knocks free new carriers. The result is that for each carrier that starts across a barrier, several carriers synchronously arrive. The result is a wide-bandwidth high-power source. Conventional diodes can be used in breakdown. The avalanche breakdown also has multistate noise.

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