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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
The Monte Carlo method for electron transport is a semiclassical Monte Carlo (MC) approach of modeling semiconductor transport. Assuming the carrier motion consists of free flights interrupted by scattering mechanisms, a computer is utilized to simulate the trajectories of particles as they move across the device under the influence of an electric field using classical mechanics.
The bandgap of Al x Ga 1−x N can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1). [1] AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved, and some reports down to 222 nm. [2] It is also used in blue semiconductor lasers.
The electron mobility of HgCdTe with a large Hg content is very high. Among common semiconductors used for infrared detection, only InSb and InAs surpass electron mobility of HgCdTe at room temperature. At 80 K, the electron mobility of Hg 0.8 Cd 0.2 Te can be several hundred thousand cm 2 /(V·s).
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).
The occupancy of the energy bands in a semiconductor is set by the position of the Fermi level relative to the semiconductor energy-band edges. Application of a source-to-substrate reverse bias of the source-body pn-junction introduces a split between the Fermi levels for electrons and holes, moving the Fermi level for the channel further from ...
1.6 × 10 −27 These carrier concentrations will change if these materials are doped. For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n .