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  2. Moore's law - Wikipedia

    en.wikipedia.org/wiki/Moore's_law

    Download as PDF; Printable version; ... (~ 1.6 cm 2) semiconductor. ... as its resistivity value increases and thus electron mobility decreases.

  3. Electron mobility - Wikipedia

    en.wikipedia.org/wiki/Electron_mobility

    Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small number of ...

  4. Shmoo plot - Wikipedia

    en.wikipedia.org/wiki/Shmoo_plot

    Cover of the comic book "THE SHMOO" The plot takes its name from the Shmoo, a fictional species created by Al Capp in the cartoon Li'l Abner.These small, blob-like creatures have shapes similar to the "working" volumes that would be enclosed by shmoo plots drawn against three independent variables (such as voltage, temperature, and response speed).

  5. Diffusion current - Wikipedia

    en.wikipedia.org/wiki/Diffusion_current

    Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.

  6. High-electron-mobility transistor - Wikipedia

    en.wikipedia.org/wiki/High-electron-mobility...

    The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.

  7. Transfer length method - Wikipedia

    en.wikipedia.org/wiki/Transfer_length_method

    The Transfer Length Method or the "Transmission Line Model" (both abbreviated as TLM) is a technique used in semiconductor physics and engineering to determine the specific contact resistivity between a metal and a semiconductor. [1] [2] [3] TLM has been developed because with the ongoing device shrinkage in microelectronics the relative ...

  8. Charge carrier density - Wikipedia

    en.wikipedia.org/wiki/Charge_carrier_density

    The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping.Using band theory, the electron density, is number of electrons per unit volume in the conduction band.

  9. Carrier lifetime - Wikipedia

    en.wikipedia.org/wiki/Carrier_Lifetime

    In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.