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This base design is supplemented by a snubber circuit consisting of a few passive components. [5] It prevents the occurrence of simultaneously high values of voltage and current, and hence high power dissipation values, during the switching process. All switching processes therefore take place in a "soft" manner.
Snubbers allow for free thermal movement of a component during regular conditions, but restrain the component in irregular conditions. [6] A hydraulic snubber allows for pipe deflection under normal operating conditions. When subjected to an impulse load, the snubber becomes activated and acts as a restraint in order to restrict pipe movement. [7]
The timing is very important, as a short circuit across the input power must be avoided and can easily be caused by one transistor turning on before another has turned off. Active rectifiers also clearly still need the smoothing capacitors present in passive examples to provide smoother power than rectification does alone.
English: Example circuit with an N-Channel MOSFET. When the switch is closed, raising the voltage at the gate, the LED is activated through the MOSFET and current limiting resistor. The resistor below the switch ensures the capacitance of the MOSFET gate is discharged when the switch is opened.
Diagram of a simple circuit with an inductance L and a flyback diode D.The resistor R represents the resistance of the inductor's windings. A flyback diode is any diode connected across an inductor used to eliminate flyback, which is the sudden voltage spike seen across an inductive load when its supply current is suddenly reduced or interrupted.
Description: Symbol for an N-Channel MOSFET with Labels (S,D,G), no bulk, arrow on source. This symbol is the one used in Sedra and Smith, "Microelectronic Circuits"
Depletion-load circuits consume less power than enhancement-load circuits at the same speed. In both cases the connection to 1 is always active, even when the connection to 0 is also active. This results in high static power consumption. The amount of waste depends on the strength, or physical size, of the pull-up.
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.