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The intensity of the electric field for this gap is therefore 3.4 MV/m. The electric field needed to arc across the minimal-voltage gap is much greater than what is necessary to arc a gap of one metre. At large gaps (or large pd) Paschen's Law is known to fail. The Meek Criteria for breakdown is usually used for large gaps.
Nanowires also show other peculiar electrical properties due to their size. Unlike single wall carbon nanotubes, whose motion of electrons can fall under the regime of ballistic transport (meaning the electrons can travel freely from one electrode to the other), nanowire conductivity is strongly influenced by edge effects.
Electrical breakdown in an electric discharge showing the ribbon-like plasma filaments from a Tesla coil.. In electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it.
Relative spark breakdown voltages of insulating gases at 1 atm; Gas Formula Breakdown voltage relative to air Molecular weight (g/mol) Density * (g/L) ODP GWP Electron-attaching Properties Sulfur hexafluoride: SF 6: 3.0: 146.06: 6.164 22800 The most popular insulating gas. It is dense and rich in fluorine, which is a good discharge quencher ...
One consequence of this quantization is that the classical formula for calculating the electrical resistance of a wire, R = ρ l A , {\displaystyle R=\rho {\frac {l}{A}},} is not valid for quantum wires (where ρ {\displaystyle \rho } is the material's resistivity , l {\displaystyle l} is the length, and A {\displaystyle A} is the cross ...
The Comparative Tracking Index (CTI) is used to measure the electrical breakdown (tracking) properties of an insulating material. Tracking is an electrical breakdown on the surface of an insulating material wherein an initial exposure to electrical arcing heat carbonizes the material. The carbonized areas are more conductive than the pristine ...
Data collected during partial discharge testing is compared to measurement values of the same cable gathered during the acceptance-test or to factory quality control standards. This allows simple and quick classification of the dielectric condition (new, strongly aged, faulty) of the device under test and appropriate maintenance and repair ...
While not capable of the same scalability as single nanowire FETs, the use of pre-fabricated multiple nanowires for the channel increases reliability and reduces production costs since large volume printing processes may be used to deposit the nanowires at a lower temperature than conventional fabrication procedures.