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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Alta Devices was a US-based specialty gallium arsenide (GaAs) PV manufacturer, which claimed to have achieved a solar cell conversion efficiency record of 29.1%, as certified by Germany's Fraunhofer ISE CalLab. [1] [2] [3] The company has ceased operations. [1] [4]
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
On March 26, 2012, Oclaro, Inc. announced the acquisition of Opnext. The merger between Oclaro and Opnext was approved by shareholders of both companies on July 23, 2012. [10] On September 12, 2013, Oclaro, Inc. announced the sale of their Gallium-Arsenide (GaAs) laser diode business in Zurich to II-VI Incorporated (now Coherent) for $115M. As ...
The company states its "NeXt Triple Junction" high efficiency solar cells have a minimum average efficiency of 29.5% to AIAA-2005-111 and AIAA-2005-112 requirements. [1] In 2006 testing at the National Renewable Energy Laboratory demonstrated an efficiency of 40.7% using triple-junction solar cells developed by Spectrolab under concentration.
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor , gallium arsenide, (chemical formula GaAs ), and readily compatible with existing semiconductor technologies.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
VSC7420XJQ-01 - 10-Port Layer-2 Gigabit Ethernet Switch. Vitesse was one of the early developers of gallium arsenide (GaAs) based integrated circuits. It now offers a line of Ethernet switching products consisting of Carrier Ethernet switch engines for customer-premises equipment, access network equipment, wireless base stations, mobile access equipment, fiber and microwave wireless backhaul ...