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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm. [6]
[34] [35] [36] This was a negative resistance phenomenon, decades before the development of the tunnel diode. After the first experiments, Losev built regenerative and superheterodyne receivers, and even transmitters.
For example, to electronically tune radio and TV receivers (varactor diodes), to generate radio-frequency oscillations (tunnel diodes, Gunn diodes, IMPATT diodes), and to produce light (light-emitting diodes). Tunnel, Gunn and IMPATT diodes exhibit negative resistance, which is useful in microwave and switching circuits.
Consequently, tunnel diode logic circuits required a means to reset the diode after each logical operation. However, a simple tunnel diode gate offered little isolation between inputs and outputs and had low fan in and fan out. More complex gates, with additional tunnel diodes and bias power supplies, overcame some of these limitations. [7]
Microwave diode reflection amplifier using a circulator. A reflection amplifier is a type of microwave amplifier circuit utilizing negative differential resistance diodes such as tunnel diodes and Gunn diodes. Negative differential resistance diodes can amplify signals, and often perform better at microwave frequencies than two-port devices.
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