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Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States.It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. [2]
March — Samsung commence commercial production of its first embedded STT-MRAM based on a 28 nm process. [64] May — Avalanche partners with United Microelectronics Corporation to jointly develop and produce embedded MRAM based on the latter's 28 nm CMOS manufacturing process. [65] 2020 December — IBM announces a 14 nm MRAM node. [66] 2021
Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero leakage power consumption which is a major advantage over charge-based memories such as SRAM and DRAM.
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Stellantis responds to Trump's tariff threat, will restart Illinois plant and build new Durango in Detroit
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The vast majority of power used in DRAM is used for refresh, so it seems reasonable to suggest that the benchmark quoted by STT-MRAM researchers is useful here too, indicating power usage about 99% lower than DRAM. The destructive read aspect of FeRAM may put it at a disadvantage compared to MRAM, however.
From January 2008 to December 2012, if you bought shares in companies when Claes Dahlbäck joined the board, and sold them when he left, you would have a -40.6 percent return on your investment, compared to a -2.8 percent return from the S&P 500.