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Providing a sufficient amount of wetting current is a crucial step in designing systems that use delicate switches with small contact pressure as sensor inputs. Failing to do this might result in switches remaining electrically "open" due to contact oxidation.
A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate can control a current between source and drain. [94]
If this is the case, the collector–emitter current is approximately proportional to the base current, but many times larger, for small base current variations. Reverse-active (or inverse-active or inverted) By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode.
A related term sealing current (aka wetting current or fritting current) is widely used in the telecommunication industry describing a small constant DC current (typically 1-20 mA) in copper wire loops in order to avoid contact oxidation of contacts and splices.
A typical Darlington transistor has a current gain of 1000 or more, so that only a small base current is needed to make the pair switch on much higher switched currents. [2] Another advantage involves providing a very high input impedance for the circuit which also translates into an equal decrease in output impedance.
The gate current makes an equivalent NPN transistor switch on, which in turn draws current from the base of an equivalent PNP transistor, turning it on also. Part of the gate current (dotted line) is lost through the ohmic path across the p-silicon, flowing directly into MT1 without passing through the NPN transistor base.
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