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1950's PNP Transistors by General Electric. TOP ROW (L-R): 2N43, 2N44, 2N45, 2N107 and 2N188A BOTTOM ROW: 2N107, 2N191 and 2N241. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor.
All these were germanium PNP transistors. Mullard's first silicon transistors were the OC201 to OC207, PNP alloy types using the standard SO-2 metal-over-glass construction such as the OC200 shown. From about 1960 Mullard switched to using the BC prefix for silicon, and AC for germanium, eliminating the confusion of part numbers. in the mid ...
All types of alloy-junction transistors became obsolete in the early 1960s, with the introduction of the planar transistor which could be mass-produced easily while alloy-junction transistors had to be made individually. The first germanium planar transistors had much worse characteristics than alloy-junction germanium transistors of the period ...
This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured.They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do ...
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating at frequencies up to 60 MHz. [34] They were made by etching depressions into an n-type germanium base from both sides with jets of indium(III) sulfate until it was a few ten-thousandths of an inch thick.
The "DR-1XX" transistor series line was a germanium type transistor and later years produced the power transistors series. Tung-Sol started transistor research in 1953 with engineering samples and delayed introduction as vacuum tube production were large and popular business. [40]
Pure germanium is known to spontaneously extrude very long screw dislocations, referred to as germanium whiskers. The growth of these whiskers is one of the primary reasons for the failure of older diodes and transistors made from germanium, as, depending on what they eventually touch, they may lead to an electrical short. [40]
As of 2013, billions of MOS transistors are manufactured every day. [2] Semiconductor devices made per year have been growing by 9.1% on average since 1978, and shipments in 2018 are predicted for the first time to exceed 1 trillion, [3] meaning that well over 7 trillion have been made to date.
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