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Shockley Semiconductor Laboratory, later known as Shockley Transistor Corporation, was a pioneering semiconductor developer founded by William Shockley, and funded by Beckman Instruments, Inc., in 1955. [2] It was the first high technology company, in what came to be known as Silicon Valley, to work on silicon-based semiconductor devices.
SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
Teal joined Bell Labs in 1930 and would remain employed there for 22 years. [1] During his time there, he continued to work with germanium and silicon. [1] When William Shockley's group at Bell Labs invented the transistor in 1947, Teal realized that substantial improvements in the device would result if it was fabricated using a single crystal, rather than the polycrystalline material then ...
Compared to their silicon and germanium counterparts, InGaAs transistors are more promising for future high-speed, low-power logic applications. Because of intrinsic characteristics of III–V compound semiconductors , quantum well and tunnel effect transistors based on InGaAs have been proposed as alternatives to more traditional MOSFET designs.
Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He recruited brilliant employees, but quickly alienated them with his autocratic and erratic management; they left and founded major companies in the industry.
In 1960, Fairchild built a circuit with four transistors on a single wafer of silicon, thereby creating the first silicon integrated circuit (Texas Instruments' Jack Kilby had developed an integrated circuit made of germanium on September 12, 1958, and was awarded a U.S. patent, however Kilby's method was not scalable and the semiconductor ...
The development of the germanium transistor in 1948 [29] opened the door to countless applications of solid state electronics. [30] From 1950 through the early 1970s, this area provided an increasing market for germanium, but then high-purity silicon began replacing germanium in transistors, diodes, and rectifiers. [31]
From left to right: Gordon Moore, C. Sheldon Roberts, Eugene Kleiner, Robert Noyce, Victor Grinich, Julius Blank, Jean Hoerni and Jay Last (1960) The traitorous eight was a group of eight employees who left Shockley Semiconductor Laboratory in 1957 to found Fairchild Semiconductor.
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