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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Quantities, Units and Symbols in Physical Chemistry, also known as the Green Book, is a compilation of terms and symbols widely used in the field of physical chemistry. It also includes a table of physical constants , tables listing the properties of elementary particles , chemical elements , and nuclides , and information about conversion ...
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Dimensionless numbers (or characteristic numbers) have an important role in analyzing the behavior of fluids and their flow as well as in other transport phenomena. [1] They include the Reynolds and the Mach numbers, which describe as ratios the relative magnitude of fluid and physical system characteristics, such as density, viscosity, speed of sound, and flow speed.
As an application example, the steady-state space-charge-limited current across a piece of intrinsic silicon with a charge-carrier mobility of 1500 cm 2 /V-s, a relative dielectric constant of 11.9, an area of 10 −8 cm 2 and a thickness of 10 −4 cm can be calculated by an online calculator to be 126.4 μA at 3 V. Note that in order for this ...
However, trap-assisted recombination can also dominate in direct bandgap materials under conditions of very low carrier densities (very low level injection) or in materials with high density of traps such as perovskites. The process is named after William Shockley, William Thornton Read [9] and Robert N. Hall, [10] who published it in 1952.
The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material,; v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and