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Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field.
Another common term encountered for both absolute and relative permittivity is the dielectric constant which has been deprecated in physics and engineering [2] as well as in chemistry. [ 3 ] By definition, a perfect vacuum has a relative permittivity of exactly 1 whereas at standard temperature and pressure , air has a relative permittivity of ...
Aluminium oxynitride (marketed under the name ALON by Surmet Corporation [3]) is a transparent ceramic composed of aluminium, oxygen and nitrogen. Aluminium oxynitride is optically transparent (≥80% for 2 mm thickness) in the near-ultraviolet , visible, and mid-wave- infrared regions of the electromagnetic spectrum.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping. Using band theory, the electron density, is number of electrons per unit volume in the conduction band. For holes, is the number of holes per unit volume in the valence band.
Despite being pyroelectric, novel materials such as boron aluminum nitride (BAlN) and boron gallium nitride (BGaN) have zero piezoelectric response for strain along the c-axis at certain compositions, [5] the two properties being closely related. However, note that some piezoelectric materials have a crystal symmetry that does not allow ...
Titanium nitride (TiN; sometimes known as tinite) is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.