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A subsystem of a computer or other electronic device that turns electric power from a wall plug or batteries into a form suitable for use by the system. power-system automation The implementation of power-operated switching and control that allows automatic operation of power system elements, instead of manual operation. power-system protection
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
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TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller; TO-92: Plastic-encapsulated package with three leads
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause ...
Newark markets and distributes electronic components and test equipment for engineers and maintenance professionals throughout the US, Canada and Mexico.Products include connectors, relays, switches, semiconductors, sensors, test equipment and tools from companies including Texas Instruments, 3M, Belden, Freescale and Honeywell, among others.
Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. A datasheet for an electronic component is a technical document that provides detailed information about the ...
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure.