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The trench capacitor is constructed by etching a deep hole into the silicon substrate. The substrate volume surrounding the hole is then heavily doped to produce a buried n + plate with low resistance. A layer of oxide-nitride-oxide dielectric is grown or deposited, and finally the hole is filled by depositing doped polysilicon, which forms the ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]
The Port of Texas City, operated by the Port of Texas City / Texas City Terminal Railway, is the eighth-largest port in the United States and the third-largest in Texas, with waterborne tonnage exceeding 78 million net tons. The Texas City Terminal Railway Company provides an important land link to the port, handling over 25,000 carloads per year.
Based on Texas Instruments's own TMS9900 microprocessor originally used in minicomputers, the TI-99/4 was the first 16-bit home computer. [3] The associated TMS9918 video display controller provides color graphics and sprite support which were only comparable with those of the Atari 400 and 800 released a month later.
Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon.
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel).