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The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.
The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
A capacitor is a passive device on a circuit board that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. This is a list of known capacitor manufacturers, their headquarters country of origin, and year founded. The oldest capacitor companies were founded ...
The Port of Texas City, operated by the Port of Texas City / Texas City Terminal Railway, is the eighth-largest port in the United States and the third-largest in Texas, with waterborne tonnage exceeding 78 million net tons. The Texas City Terminal Railway Company provides an important land link to the port, handling over 25,000 carloads per year.
Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon.
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