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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The dimeric silicon dioxide, (SiO 2) 2 has been obtained by reacting O 2 with matrix isolated dimeric silicon monoxide, (Si 2 O 2). In dimeric silicon dioxide there are two oxygen atoms bridging between the silicon atoms with an Si–O–Si angle of 94° and bond length of 164.6 pm and the terminal Si–O bond length is 150.2 pm.
Silicon oxynitride is a ceramic material with the chemical formula SiO x N y.While in amorphous forms its composition can continuously vary between SiO 2 and Si 3 N 4 (silicon nitride), the only known intermediate crystalline phase is Si 2 N 2 O. [2] It is found in nature as the rare mineral sinoite in some meteorites and can be synthesized in the laboratory.
Carbothermal reduction of silicon dioxide in a nitrogen atmosphere at 1400–1450 °C has also been examined: [9] 3 SiO 2 + 6 C + 2 N 2 → Si 3 N 4 + 6 CO. The nitridation of silicon powder was developed in the 1950s, following the "rediscovery" of silicon nitride and was the first large-scale method for powder production.
At standard temperature and pressure, silicon is a shiny semiconductor with a bluish-grey metallic lustre; as typical for semiconductors, its resistivity drops as temperature rises. This arises because silicon has a small energy gap ( band gap ) between its highest occupied energy levels (the valence band) and the lowest unoccupied ones (the ...
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.
A silicon–oxygen bond (Si−O bond) is a chemical bond between silicon and oxygen atoms that can be found in many inorganic and organic compounds. [1] In a silicon–oxygen bond, electrons are shared unequally between the two atoms, with oxygen taking the larger share due to its greater electronegativity.
Metal silicides, silicon halides, and similar inorganic compounds can be prepared by directly reacting elemental silicon or silicon dioxide with stable metals or with halogens. Silanes, compounds of silicon and hydrogen, are often used as strong reducing agents, and can be prepared from aluminum–silicon alloys and hydrochloric acid.