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Typical electron mobility at room temperature (300 K) in metals like gold, copper and silver is 30–50 cm 2 /(V⋅s). Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s).
Silicon reacts with gaseous sulfur at 600 °C and gaseous phosphorus at 1000 °C. This oxide layer nevertheless does not prevent reaction with the halogens; fluorine attacks silicon vigorously at room temperature, chlorine does so at about 300 °C, and bromine and iodine at about 500 °C.
Silicon. The thermal conductivity of silicon is better than that of most metals. [citation needed] A sponge-like porous form of silicon (p-Si) is typically prepared by the electrochemical etching of silicon wafers in a hydrofluoric acid solution. [152] Flakes of p-Si sometimes appear red; [153] it has a band gap of 1.97–2.1 eV. [154]
Electrical conductivity of water samples is used as an indicator of how salt-free, ion-free, or impurity-free the sample is; the purer the water, the lower the conductivity (the higher the resistivity). Conductivity measurements in water are often reported as specific conductance, relative to the conductivity of pure water at 25 °C.
(room temperature) (alpha, amorphous) 135.1 CR2 (10 −8 Ωm) (room temperature) (alpha, crystalline) 121.7 CR2 (10 −8 Ωm) (room temperature) (alpha, polycrystalline) 131.0 LNG (10 −8 Ωm) 131 WEL (10 −8 Ωm) (293 K–298 K) 130 65 Tb terbium; use (room temperature) (alpha, polycrystalline) 1.150 μΩm CRC (10 −8 Ωm) (290 K–300 K) 115
The intrinsic carrier concentration varies between materials and is dependent on temperature. Silicon's n i, for example, is roughly 1.08×10 10 cm −3 at 300 kelvins, about room temperature. [6] In general, increased doping leads to increased conductivity due to the higher concentration of carriers.
The conductivity of silicon is increased by adding a small amount (of the order of 1 in 10 8) of pentavalent (antimony, phosphorus, or arsenic) or trivalent (boron, gallium, indium) atoms. [3] This process is known as doping, and the resulting semiconductors are known as doped or extrinsic semiconductors. Apart from doping, the conductivity of ...
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...