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In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.
Like the floating gate memory cell, a charge trapping cell uses a variable charge between the control gate and the channel to change the threshold voltage of the transistor. The mechanisms to modify this charge are relatively similar between the floating gate and the charge trap, and the read mechanisms are also very similar.
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]
As of 2020, 3D NAND flash memories by Micron and Intel instead use floating gates, however, Micron 128 layer and above 3D NAND memories use a conventional charge trap structure, due to the dissolution of the partnership between Micron and Intel. Charge trap 3D NAND flash is thinner than floating gate 3D NAND.
2006-09-07 23:46 Jamesm76 294×587×0 (11839 bytes) I am the author and I release this to the public domain.; 2006-09-07 23:27 Jamesm76 294×587×0 (11827 bytes) SVG drawing of a CMOS NAND gate replacing the older PNG version I had previously uploaded ("CMOS NAND Layout.png").
dual 4-input NAND gate 14 SN74LS20: 74x21 2 dual 4-input AND gate 14 SN74LS21: 74x22 2 dual 4-input NAND gate open-collector 14 SN74LS22: 74x23 2 dual 4-input NOR gate with strobe, one gate expandable with 74x60 16 SN7423: 74x24 4 quad 2-input NAND gate Schmitt trigger 14 SN74LS24: 74x25 2 dual 4-input NOR gate with strobe 14 SN7425: 74x26 4
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration layout is encapsulated into an abstract logic representation (such as a NAND gate).
Propagation delay is the time taken for a two-input NAND gate to produce a result after a change of state at its inputs. Toggle speed represents the fastest speed at which a J-K flip flop could operate. Power per gate is for an individual 2-input NAND gate; usually there would be more than one gate per IC package. Values are very typical and ...