Search results
Results from the WOW.Com Content Network
Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
The refresh cycles are distributed across the entire refresh interval in such a way that all rows are refreshed within the required interval. To refresh one row of the memory array using RAS only refresh (ROR), the following steps must occur: The row address of the row to be refreshed must be applied at the address input pins.
Another is selective refresh, which limits self-refresh to a portion of the DRAM array. The fraction which is refreshed is configured using an extended mode register. The third, implemented in Mobile DDR (LPDDR) and LPDDR2 is "deep power down" mode, which invalidates the memory and requires a full reinitialization to exit from.
If you've cleared the cache in your web browser, but are still experiencing issues, you may need to restore its original settings.This can remove adware, get rid of extensions you didn't install, and improve overall performance.
A web browser's cache stores temporary instances of web pages, allowing them to load faster next time you visit. Clearing your browser's cache is recommended if you're experiencing things like pages freezing, not loading, or being unresponsive.
In these contexts, frame rate may be used interchangeably with frame frequency and refresh rate, which are expressed in hertz. Additionally, in the context of computer graphics performance, FPS is the rate at which a system, particularly a GPU , is able to generate frames, and refresh rate is the frequency at which a display shows completed ...
Get AOL Mail for FREE! Manage your email like never before with travel, photo & document views. Personalize your inbox with themes & tabs. You've Got Mail!
Rowhammer (also written as row hammer) is a computer security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access.