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The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.
The drift velocity is therefore: ... The drift current density resulting from an electric field can be calculated from the drift velocity. ... This formula is the ...
The drift velocity is = Because of the mass dependence, the gravitational drift for the electrons can normally be ignored. The dependence on the charge of the particle implies that the drift direction is opposite for ions as for electrons, resulting in a current.
Without the presence of an electric field, the electrons have no net velocity. When a DC voltage is applied, the electron drift velocity will increase in speed proportionally to the strength of the electric field. The drift velocity in a 2 mm diameter copper wire in 1 ampere current is approximately 8 cm per hour. AC voltages cause no net movement.
is the drift velocity, and; is the charge on each particle. Typically, electric charges in solids flow slowly. For example, in a copper wire of cross-section 0.5 mm 2, carrying a current of 5 A, the drift velocity of the electrons is on the order of a
In other words, the electrical mobility of the particle is defined as the ratio of the drift velocity to the magnitude of the electric field: =. For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1]
The diffusion current and drift current together are described by the drift–diffusion equation. [1] It is necessary to consider the part of diffusion current when describing many semiconductor devices. For example, the current near the depletion region of a p–n junction is dominated by the diffusion current. Inside the depletion region ...