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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation.
The memory, however, was disliked for its high random-access latencies. In the N64, the RDRAM modules are cooled by a passive heatspreader assembly. [ 12 ] Nintendo also included a provision for upgrading the system memory with the Expansion Pak accessory, allowing certain games to be enhanced with either enhanced graphics, higher resolution or ...
XDR DRAM (extreme data rate dynamic random-access memory) is a high-performance dynamic random-access memory interface. It is based on and succeeds RDRAM . Competing technologies include DDR2 and GDDR4 .
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [ 3 ] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of ...
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, [ 2 ] [ 3 ] [ 4 ] it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, [ 5 ...
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips.
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.