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In materials science, the term single-layer materials or 2D materials refers to crystalline solids consisting of a single layer of atoms. These materials are promising for some applications but remain the focus of research. Single-layer materials derived from single elements generally carry the -ene suffix in their names, e.g. graphene.
A perovskite is any material of formula ABX 3 with a crystal structure similar to that of the mineral perovskite, which consists of calcium titanium oxide (CaTiO 3). [2] The mineral was first discovered in the Ural mountains of Russia by Gustav Rose in 1839 and named after Russian mineralogist L. A. Perovski (1792–1856).
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The term nanoporous materials contain subsets of microporous and mesoporous materials. Microporous materials are porous materials with a mean pore size smaller than 2 nm, while mesoporous materials are those with pores sizes in the region 2–50 nm. [23] Microporous materials exhibit pore sizes with comparable length-scale to small molecules.
Energy materials are used for energy harvesting, storage, and conversion. [ 1 ] [ 2 ] Applications of energy materials include photovoltaics , as well as piezoelectronics . The study of energy materials is usually interdisciplinary , uniting materials scientists , chemists , physicists , biologists , and engineers .
The stacking-fault energy (SFE) is a materials property on a very small scale. It is noted as γ SFE in units of energy per area. A stacking fault is an interruption of the normal stacking sequence of atomic planes in a close-packed crystal structure. These interruptions carry a certain stacking-fault energy.
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
In March 2020, the Samsung Advanced Institute of Technology (SAIT) published research on an all-solid-state battery (ASSB) using an argyrodite-based solid-state electrolyte with a demonstrated energy density of 900 Wh L −1 and a stable cyclability of more than 1000 cycles, reaching for the first time a value close to the 1000 Wh L −1.