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Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]
A plume ejected from a SrRuO 3 target during pulsed laser deposition. One possible configuration of a PLD deposition chamber. Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited.
The PVD process can be carried out at lower deposition temperatures and without corrosive products, but deposition rates are typically lower. Electron-beam physical vapor deposition, however, yields a high deposition rate from 0.1 to 100 μm / min at relatively low substrate temperatures, with very high material utilization efficiency.
Ion plating (IP) is a physical vapor deposition (PVD) process that is sometimes called ion assisted deposition (IAD) or ion vapor deposition (IVD) and is a modified version of vacuum deposition. Ion plating uses concurrent or periodic bombardment of the substrate, and deposits film by atomic-sized energetic particles called ions .
Sputtering; Plasma etching can change the surface contact angles, such as hydrophilic to hydrophobic, or vice versa. Argon plasma etching has reported to enhance contact angle from 52 deg to 68 deg, [7] and, Oxygen plasma etching to reduce contact angle from 52 deg to 19 deg for CFRP composites for bone plate applications. Plasma etching has ...
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Reactive ion etching (bottom) compared to photochemical etching (center) A diagram of a common RIE setup. An RIE consists of two electrodes (1 and 4) that create an electric field (3) meant to accelerate ions (2) toward the surface of the samples (5).