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The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Quantum wells are formed in semiconductors by having a material, like gallium arsenide, sandwiched between two layers of a material with a wider bandgap, like aluminum arsenide. (Other examples: a layer of indium gallium nitride sandwiched between two layers of gallium nitride.)
Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials like silicon and gallium arsenide. They are the key component used to make short-wavelength (green-UV) LEDs or lasers , and are also used in certain radio frequency applications, notably military ...
Arsenide nitrides or nitride arsenides are compounds containing anions composed of nitride (N 3−) and arsenide (As 3−). They can be considered as mixed anion compounds or mixed pnictide compounds. Related compounds include the arsenide phosphides, germanide arsenides, arsenide carbides, and phosphide nitrides.
Electron affinity can be defined in two equivalent ways. First, as the energy that is released by adding an electron to an isolated gaseous atom. The second (reverse) definition is that electron affinity is the energy required to remove an electron from a singly charged gaseous negative ion.