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Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Kingsemi demonstrated its equipment which included a prototype chemical cleansing machine that covers the process requirements at 28nm and above as well as a wafer bonding machine. [ 5 ] In December 2024, Kingsemi was targeted in a new round of US export controls and added to the United States Department of Commerce 's Entity List .
Wafer bonds are commonly characterized by three important encapsulation parameters: bond strength, hermeticity of encapsulation and bonding induced stress. [1]The bond strength can be evaluated using double cantilever beam or chevron respectively micro-chevron tests.
In 2006, the successfully used equipment division was spun off into Suss Microtec Reman. In 2007, the Device Bonder product line was sold, [5] and two years later the Prober line. [6] This was followed by the opening of offices in Singapore and Korea. [3] The 2010s were characterized by fluctuations in the semiconductor equipment technology market.
Thermocompression bonding describes a wafer bonding technique and is also referred to as diffusion bonding, pressure joining, thermocompression welding or solid-state welding. Two metals, e.g. gold - gold (Au) , are brought into atomic contact applying force and heat simultaneously. [ 1 ]
Wafer backgrinding and polishing [133] (reduces the thickness of the wafer for thin devices like a smartcard or PCMCIA card or wafer bonding and stacking, this can also occur during wafer dicing, in a process known as Dice Before Grind or DBG [134] [135]) Wafer bonding and stacking (for three-dimensional integrated circuits and MEMS)
The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.
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