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Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, . Then the electron mobility μ is defined as =.
is the mobility (m 2 /(V·s)). In other words, the electrical mobility of the particle is defined as the ratio of the drift velocity to the magnitude of the electric field: =. For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1]
When an electron leaves a helium atom, it leaves an electron hole in its place. This causes the helium atom to become positively charged. In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or atomic lattice.
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. [4] The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. [5] [6] Many metals have electron and hole bands. In some, the majority carriers are holes. [citation ...
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.
The carrier particles, namely the holes and electrons of a semiconductor, move from a place of higher concentration to a place of lower concentration. Hence, due to the flow of holes and electrons there is a current. This current is called the diffusion current. The drift current and the diffusion current make up the total current in the conductor.