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A key requirement was the need for a high work function metal such as Pt or Ir to interface with the TaO x layer. The change of O content results in resistance change as well as Schottky barrier change. More recently, a Ta 2 O 5 /TaO x layer was implemented, which still requires the high work function metal to interface with Ta 2 O 5. [61]
A NVDIMM (pronounced "en-vee-dimm") or non-volatile DIMM is a type of persistent random-access memory for computers using widely used DIMM form-factors. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown.
Since the access time depends on the physical location of the data on the device, mechanically addressed systems may be sequential access. For example, magnetic tape stores data as a sequence of bits on a long tape; transporting the tape past the recording head is required to access any part of the storage. Tape media can be removed from the ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
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NVM Express over Fabrics (NVMe-oF) is the concept of using a transport protocol over a network to connect remote NVMe devices, contrary to regular NVMe where physical NVMe devices are connected to a PCIe bus either directly or over a PCIe switch to a PCIe bus.
Different instructions may take different amounts of time; for example, a processor may be able to execute hundreds of register-to-register instructions while a single load from the main memory is in progress. A key advance in improving performance is to allow those fast instructions to be performed while the others are waiting for data.
Another form of one-time programmable memory device uses the same semiconductor chip as an ultraviolet-erasable programmable read-only memory (UV-EPROM), but the finished device is put into an opaque package, instead of the expensive ceramic package with transparent quartz window required for erasing. These devices are programmed with the same ...