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Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a ...
Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, enabling precise manipulation over the composition, structure, and properties. The technique has applications in fields such as ...
This is a better-controlled process than reactive ion etching, though the issue with commercial use of it has been throughput; sophisticated gas handling is required, and removal rates of one atomic layer per second are around the state of the art. [1] The equivalent process for depositing material is atomic layer deposition (ALD).
Thin-film thickness monitors, deposition rate controllers, and so on, are a family of instruments used in high and ultra-high vacuum systems. They can measure the thickness of a thin film, not only after it has been made, but while it is still being deposited, and some can control either the final thickness of the film, the rate at which it is deposited, or both.
Atomic layer deposition and its sister technique molecular layer deposition, uses gaseous precursor to deposit conformal thin film's one layer at a time. The process is split up into two half reactions, run in sequence and repeated for each layer, in order to ensure total layer saturation before beginning the next layer.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Temperature control of both the gas and water, as well as level control, affect delivery rate. ALD is increasingly popular for creating thin films for gate dielectrics, capacitor dielectrics and diffusion barriers. Contamination is a high risk in this process because ALD is slower and performed at lower temperatures.