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  2. Memristor - Wikipedia

    en.wikipedia.org/wiki/Memristor

    A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.

  3. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

  4. Memistor - Wikipedia

    en.wikipedia.org/wiki/Memistor

    While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.

  5. Memristors - Wikipedia

    en.wikipedia.org/?title=Memristors&redirect=no

    Pages for logged out editors learn more. Contributions; Talk; Memristors

  6. Non-volatile memory - Wikipedia

    en.wikipedia.org/wiki/Non-volatile_memory

    RRAM (ReRAM) works by changing the resistance across a dielectric solid-state material often referred to as a memristor. ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field.

  7. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    1995 — Motorola (later to become Freescale Semiconductor, and subsequently NXP Semiconductors) initiates work on MRAM development 1996 — Spin torque transfer is proposed [ 27 ] [ 28 ] 1997 — Sony published the first Japan Patent Application for S.P.I.N.O.R. (Spin Polarized Injection Non-Volatile Orthogonal Read/Write RAM), a forerunner of ...

  8. Williams tube - Wikipedia

    en.wikipedia.org/wiki/Williams_tube

    The Williams tube works by displaying a grid of dots on a cathode-ray tube (CRT). Due to the way CRTs work, this creates a small charge of static electricity over each dot. The charge at the location of each of the dots is read by a thin metal sheet just in front of the display.

  9. Talk:Memristor/Archive 2 - Wikipedia

    en.wikipedia.org/wiki/Talk:Memristor/Archive_2

    If you are seriously interested in memristors I would consider educating yourself a little more in the literature. UC Berkeley has a series of videos covering the Memristor Symposium on YouTube and I would strongly recommend watching them, particularly the video covering Snider's work on memristive neuromorphic circuit architectures.