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NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
With the vertical structure, the component area is roughly proportional to the current it can sustain, and the component thickness (actually the N-epitaxial layer thickness) is proportional to the breakdown voltage. [75] Power MOSFETs with lateral structure are mainly used in high-end audio amplifiers and high-power PA systems.
The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, and advanced paralleling capability. [16] It has a wide range of power electronic applications, such as portable information appliances , power integrated circuits, cell phones , notebook computers , and the communications ...
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation. Power MOSFETs are still the device of choice for drain-to-source voltages of 1 to 200 V.
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
The VMOS was invented by Hitachi in 1969, [11] when they introduced the first vertical power MOSFET in Japan. [12] T. J. Rodgers, while he was a student at Stanford University, filed a US patent for a VMOS in 1973. [13] Siliconix commercially introduced a VMOS in 1975. [11] The VMOS later developed into what became known as the vertical DMOS . [14]
Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.