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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
Because of the high carrier concentration, tunnel diodes are very fast, may be used at low (mK) temperatures, high magnetic fields, and in high radiation environments. [47] Because of these properties, they are often used in spacecraft. Varicap or varactor diodes These are used as voltage-controlled capacitors.
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm.
The first widely used solid-state negative resistance device was the tunnel diode, invented in 1957 by Japanese physicist Leo Esaki. [ 67 ] [ 163 ] Because they have lower parasitic capacitance than vacuum tubes due to their small junction size, diodes can function at higher frequencies, and tunnel diode oscillators proved able to produce power ...
During the 1960s the use of tunnel diodes in logic circuits was an active research topic. When compared to transistor logic gates of the time, the tunnel diode offered much higher speeds. Unlike other diode types, the tunnel diode offered the possibility of amplification of signals at each stage.
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .
GaAsSb heterojunction tunnel diodes offer other advantages. The same current can be achieved by using a lower doping. [38] Secondly, because the lattice constant is larger for GaAsSb than Ge, one can use a wider range of materials for the bottom cell because more materials are lattice-matched to GaAsSb than to Ge. [22]
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