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Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]
For example, uncompressed songs in CD format have a data rate of 16 bits/channel x 2 channels x 44.1 kHz ≅ 1.4 Mbit/s, whereas AAC files on an iPod are typically compressed to 128 kbit/s, yielding a compression ratio of 10.9, for a data-rate saving of 0.91, or 91%.
Besides differences in the schema, there are several other differences between the earlier Office XML schema formats and Office Open XML. Whereas the data in Office Open XML documents is stored in multiple parts and compressed in a ZIP file conforming to the Open Packaging Conventions, Microsoft Office XML formats are stored as plain single monolithic XML files (making them quite large ...
The current–voltage characteristics of four devices: a resistor with large resistance, a resistor with small resistance, a P–N junction diode, and a battery with nonzero internal resistance.
The ratio between DRAM and FSB is commonly referred to as "DRAM:FSB ratio". Memory dividers are only applicable to those chipsets in which memory speed is dependent on FSB speeds. Certain chipsets like nVidia 680i have separate memory and FSB lanes due to which memory clock and FSB clock are asynchronous and memory dividers are not used there.