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A FIB workstation. Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
Deposition occurs in a focused ion beam (FIB) setup, which strongly limits characterization of the deposit during or right after the deposition. Only SEM-like imaging using secondary electrons is possible, and even that imaging is restricted to short observations due to sample damaging by the Ga + beam. The use of a dual beam instrument, that ...
An account of the early history of scanning electron microscopy has been presented by McMullan. [2] [3] Although Max Knoll produced a photo with a 50 mm object-field-width showing channeling contrast by the use of an electron beam scanner, [4] it was Manfred von Ardenne who in 1937 invented [5] a microscope with high resolution by scanning a very small raster with a demagnified and finely ...
Electron-beam-induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is most commonly used to identify buried junctions or defects in semiconductors, or to examine minority carrier properties.
Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In the microscope an ...
Carl Zeiss Crossbeam 550 – combines a field emission scanning electron microscope (FE-SEM) with a focused ion beam (FIB). Nanofluidics channels fabricated with a Zeiss Crossbeam 550 L, in a silicon master stamp. Ion beams can be used for material modification (e.g. by sputtering or ion beam etching) and for ion beam analysis.
Ion beam analysis (IBA) is an important family of modern analytical techniques involving the use of MeV ion beams to probe the composition and obtain elemental depth profiles in the near-surface layer of solids. IBA is not restricted to MeV energy ranges.
Electron channelling contrast imaging (ECCI) is a scanning electron microscope (SEM) diffraction technique used in the study of defects in materials. These can be dislocations or stacking faults that are close to the surface of the sample, low angle grain boundaries or atomic steps.