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Magnetic sequential access memory is typically used for secondary storage in general-purpose computers due to their higher density at lower cost compared to RAM, as well as resistance to wear and non-volatility. Magnetic tape is a type of sequential access memory still in use; historically, drum memory has also been used.
Sequential access is a term describing a group of elements (such as data in a memory array or a disk file or on magnetic-tape data storage) being accessed in a predetermined, ordered sequence. It is the opposite of random access , the ability to access an arbitrary element of a sequence as easily and efficiently as any other at any time.
In computing, a memory access pattern or IO access pattern is the pattern with which a system or program reads and writes memory on secondary storage.These patterns differ in the level of locality of reference and drastically affect cache performance, [1] and also have implications for the approach to parallelism [2] [3] and distribution of workload in shared memory systems. [4]
RAM drive – a block of random-access memory that the operating system treats as if it were secondary storage; Sequential access memory – a class of data storage devices that read stored data in a sequence; Wear leveling – a technique for prolonging the service life of some kinds of erasable computer storage media, such as flash memory
It may make sense to separate read latency and write latency (especially for non-volatile memory) and in case of sequential access storage, minimum, maximum and average latency. Throughput The rate at which information can be read from or written to the storage.
NAND flash, on the other hand, shines in scenarios demanding cost-effective, high-capacity storage with sequential data access. Flash memory [3] is used in computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, and medical electronics.
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A model, called Concurrent-AMAT (C-AMAT), is introduced for more accurate analysis of current memory systems. More information on C-AMAT can be found in the external links section. AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the ...