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Tantalum pentoxide, also known as tantalum(V) oxide, is the inorganic compound with the formula Ta 2 O 5. It is a white solid that is insoluble in all solvents but is attacked by strong bases and hydrofluoric acid. Ta 2 O 5 is an inert material with a high refractive index and low absorption (i.e. colourless), which makes it useful for coatings ...
The extremely thin oxide film of a tantalum electrolytic capacitor, the dielectric layer, must be formed in an amorphous structure. Changing the amorphous structure into a crystallized structure is reported to increase the conductivity by 1000 times, combined with an enlargement of the oxide volume. [ 15 ]
Characteristics of the different oxide layers in aluminium, tantalum and niobium electrolytic capacitors [1] [2] Anode-material Dielectric Oxide structure Relative permittivity Breakdown voltage (V/μm) Electric layer thickness (nm/V) aluminium: Aluminium oxide Al 2 O 3: amorphous: 9.6: 710: 1.4 crystalline: 11.6…14.2 [3] 800...1000 [4] 1.25 ...
The main difference between the polymer capacitors is the anode material and its oxide used as the dielectric: Polymer tantalum electrolytic capacitors use high purity sintered tantalum powder as an anode with tantalum pentoxide (Ta 2 O 5) as a dielectric and; Polymer aluminium electrolytic capacitors use a high purity and electrochemically ...
The permittivity of tantalum pentoxide is approximately three times higher than aluminium oxide, producing significantly smaller components. However, permittivity determines only the dimensions. Electrical parameters, especially conductivity , are established by the electrolyte's material and composition.
Silicon dioxide (SiO 2) has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per device width), raising device performance.
Tantalum(V) oxide films have a variety of applications including as optical films with refractive indices as high as 2.039 [16] and as a thin-film dielectric material in dynamic random access memory and semiconductor field-effect transistors. [12] The approach chosen for preparation of these materials is determined by the desired properties.
Tantalum electrolytic capacitors exploit the tendency of tantalum to form a protective oxide surface layer, using tantalum powder, pressed into a pellet shape, as one "plate" of the capacitor, the oxide as the dielectric, and an electrolytic solution or conductive solid as the other "plate".