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The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
FPM, EDO, SDR, and RDRAM memory was not commonly installed in a dual-channel configuration. DDR and DDR2 memory is usually installed in single- or dual-channel configuration. DDR3 memory is installed in single-, dual-, tri-, and quad-channel configurations. Bit rates of multi-channel configurations are the product of the module bit-rate (given ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The naming convention for DDR, DDR2 and DDR3 modules specifies either a maximum speed (e.g., DDR2-800) or a maximum bandwidth (e.g., PC2-6400). The speed rating (800) is not the maximum clock speed, but twice that (because of the doubled data rate). The specified bandwidth (6400) is the maximum megabytes transferred per second using a 64-bit width.
Like DDR SDRAM, SLDRAM uses a double-pumped bus, giving it an effective speed of 400, [29] 600, [30] or 800 MT/s. (1 MT/s = 1000^2 transfers per second) SLDRAM used an 11-bit command bus (10 command bits CA9:0 plus one start-of-command FLAG line) to transmit 40-bit command packets on 4 consecutive edges of a differential command clock (CCLK/CCLK#).
The term rank was created and defined by JEDEC, the memory industry standards group. On a DDR, DDR2, or DDR3 memory module, each rank has a 64-bit-wide data bus (72 bits wide on DIMMs that support ECC). The number of physical DRAMs depends on their individual widths.
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