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A FIB workstation. Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
Deposition occurs in a focused ion beam (FIB) setup, which strongly limits characterization of the deposit during or right after the deposition. Only SEM-like imaging using secondary electrons is possible, and even that imaging is restricted to short observations due to sample damaging by the Ga + beam. The use of a dual beam instrument, that ...
A serial block-face scanning electron microscope consists of an ultramicrotome mounted inside the vacuum chamber of a scanning electron microscope. Samples are prepared by methods similar to that in transmission electron microscopy ( TEM ), typically by fixing the sample with aldehyde, staining with heavy metals such as osmium and uranium then ...
A scanning transmission electron microscope (STEM) is a type of transmission electron microscope (TEM). Pronunciation is [stɛm] or [ɛsti:i:ɛm]. Pronunciation is [stɛm] or [ɛsti:i:ɛm]. As with a conventional transmission electron microscope (CTEM), images are formed by electrons passing through a sufficiently thin specimen.
Electron-beam-induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is most commonly used to identify buried junctions or defects in semiconductors, or to examine minority carrier properties.
One of these companies is TESCAN which was founded in 1991 by former Tesla development and service employees. The name TESCAN was derived from the words TESla and SCANning (scanning – screening). [3] TESCAN originally manufactured programmable controllers, digitizers for older analog scanning electron microscopes, and other small accessories.
Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In the microscope an ...
Scanning probe lithography. A scanning probe can be used for low-energy electron beam lithography, offering sub-100 nm resolution, determined by the dose of low-energy electrons. Another alternative in electron-beam lithography is to use extremely high electron energies (at least 100 keV) to essentially "drill" or sputter the material.
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