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A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction . It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors.
Heterojunction solar cells are compatible with IBC technology, ie. the cell metallisation is entirely on the back surface. A Heterojunction IBC cell is often abbreviated to HBC. A HBC structure has several advantages over conventional SHJ cells; the major advantage is the elimination of shading from the front grid, which improves light capture ...
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1]
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz.
Cross section of a GaAs/AlGaAs/InGaAs pHEMT Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.. A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of ...
Here is showcased the different types of heterojunctions in semiconductors. In type I, the conduction band of the second semiconductor is lower than that of the first, whilst its valence band is higher than that of the first. As a consequence the band gap of the first semiconductor is larger than the band gap of the second semiconductor.
A double heterostructure, sometimes called double heterojunction, is formed when two semiconductor materials are grown into a "sandwich". One material (such as AlGaAs) is used for the outer layers (or cladding), and another of smaller band gap (such as GaAs) is used for the inner layer. In this example, there are two AlGaAs-GaAs junctions (or ...
It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. [1]
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