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Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
TIP31 transistors are designated as TIP31A, TIP31B, TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case. TIP stands for Texas Instruments (Plastic) Power [6] transistor. 31 is an arbitrary identifier. [7] These ratings are for the Fairchild TIP31 series.
Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
A small outline transistor (SOT) is a family of small footprint, discrete surface mount transistor commonly used in consumer electronics. The most common SOT are SOT23 variations,. [ 1 ] SOT23-5 differs from SOT23 in a wider body of 1.6 mm (0.063 in) instead of 1.3 mm (0.051 in).
Modern 2N3055 datasheets often, but not always, specify f T of 2.5 MHz (minimum) because some improvements have been made over time (especially the move to the epitaxial manufacturing process). Nevertheless, a 2N3055 (and many other power transistors originating from this era) cannot be assumed to have great high-frequency performance and there ...
Similarly, in field-effect transistors, and MOSFETs in particular, transconductance is the change in the drain current divided by the small change in the gate–source voltage with a constant drain–source voltage. Typical values of g m for a small-signal field-effect transistor are 1 to 30 mS.
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