Search results
Results from the WOW.Com Content Network
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
In electromagnetism, charge density is the amount of electric charge per unit length, surface area, or volume. Volume charge density (symbolized by the Greek letter ρ) is the quantity of charge per unit volume, measured in the SI system in coulombs per cubic meter (C⋅m −3), at any point in a volume.
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
N dop is the net density of dopants (either donors or acceptors). When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants. Instead, a measure of the profile of the doping gradients provides an "effective" profile that better matches the profile of the majority carrier density.
Let ρ denote the number density of electrons, and φ the electric potential. At first, the electrons are evenly distributed so that there is zero net charge at every point. Therefore, φ is initially a constant as well. We now introduce a fixed point charge Q at the origin. The associated charge density is Qδ(r), where δ(r) is the Dirac ...
On samples with low free carrier density conductance transients have also been used for a DLTS analysis. [4] In addition to the conventional temperature scan DLTS, in which the temperature is swept while pulsing the device at a constant frequency, the temperature can be kept constant and sweep the pulsing frequency.