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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Density system unit unit-code symbol or abbrev. notes sample default conversion combination output units Metric: kilogram per cubic metre: kg/m3 kg/m 3: 1.0 kg/m 3 (1.7 lb/cu yd)
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
The change in the Cooper pair density brought about by the absorption of a single photon in a strip of superconducting material produces a measurable change in its kinetic inductance. Kinetic inductance is also used in a design parameter for superconducting flux qubits : β {\displaystyle \beta } is the ratio of the kinetic inductance of the ...
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
Print/export Download as PDF; Printable version; ... Pages in category "Units of density" The following 15 pages are in this category, out of 15 total. ...
In electromagnetism, charge density is the amount of electric charge per unit length, surface area, or volume. Volume charge density (symbolized by the Greek letter ρ) is the quantity of charge per unit volume, measured in the SI system in coulombs per cubic meter (C⋅m −3), at any point in a volume.
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device.