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Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
In condensed matter physics and electrochemistry, drift current is the electric current, or movement of charge carriers, which is due to the applied electric field, often stated as the electromotive force over a given distance. When an electric field is applied across a semiconductor material, a current is produced due to the flow of charge ...
The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material, v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and; μ e is the electron mobility.
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The drift current, by contrast, is due to the motion of charge carriers due to the force exerted on them by an electric field. Diffusion current can be in the same or opposite direction of a drift current. The diffusion current and drift current together are described by the drift–diffusion equation. [1]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.