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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
It is a set of small DRAM banks with an SRAM cache in front to make it behave much like a true SRAM. It is used in Nintendo GameCube and Wii video game consoles. Cypress Semiconductor 's HyperRAM [ 72 ] is a type of PSRAM supporting a JEDEC -compliant 8-pin HyperBus [ 73 ] or Octal xSPI interface.
SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their switching time is very low. However, since an SRAM cell consists of several transistors, typically four or six, its density is much lower than DRAM.
The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six-transistor memory cell, typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM.
SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers. CAM ( Content-addressable memory ) – This is a specialized type in which, instead of accessing data using an address, a data word is applied and the memory returns the location if the ...
Quad Data Rate (QDR) SRAM is a type of static RAM computer memory that can transfer up to four words of data in each clock cycle. Like Double Data-Rate (DDR) SDRAM, QDR SRAM transfers data on both rising and falling edges of the clock signal. The main purpose of this capability is to enable reads and writes to occur at high clock frequencies ...
VCM inserts an SRAM cache of 16 "channel" buffers, each 1/4 row "segment" in size, between DRAM banks' sense amplifier rows and the data I/O pins. "Prefetch" and "restore" commands, unique to VCSDRAM, copy data between the DRAM's sense amplifier row and the channel buffers, while the equivalent of SDRAM's read and write commands specify a ...
On some systems, not only the main memory (DRAM-based) is capable of scrubbing but also the CPU caches (SRAM-based). On most systems the scrubbing rates for both can be set independently. Because cache is much smaller than the main memory, the scrubbing for caches does not need to happen as frequently.