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Doping concentration for silicon semiconductors may range anywhere from 10 13 cm −3 to 10 18 cm −3. Doping concentration above about 10 18 cm −3 is considered degenerate at room temperature. Degenerately doped silicon contains a proportion of impurity to silicon on the order of parts per thousand.
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The SI unit of velocity is m/s, and the SI unit of electric field is V/m. Therefore the SI unit of mobility is (m/s)/(V/m) = m 2 /(V⋅s). However, mobility is much more commonly expressed in cm 2 /(V⋅s) = 10 −4 m 2 /(V⋅s). Mobility is usually a strong function of material impurities and temperature, and is determined empirically.
In an extrinsic semiconductor, the concentration of doping atoms in the crystal largely determines the density of charge carriers, which determines its electrical conductivity, as well as a great many other electrical properties. This is the key to semiconductors' versatility; their conductivity can be manipulated over many orders of magnitude ...
The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and ...
The resistivity of the material; The doping type (i.e. whether it is a P-type or N-type material) The sheet carrier density of the majority carrier (the number of majority carriers per unit area). From this the charge density and doping level can be found; The mobility of the majority carrier; The method was first propounded by Leo J. van der ...
The resistivity, mobility, and free-carrier concentration in monocrystalline silicon vary with doping concentration of the single crystal silicon. Whereas the doping of polycrystalline silicon does have an effect on the resistivity, mobility, and free-carrier concentration, these properties strongly depend on the polycrystalline grain size ...